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Electronic Properties of Impurities in Graphene  [4]

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Graphene is a two-dimensional material that has the potential to play a large role in new electronic devices. To reach this potential one needs to be able to control its conductivity, its carrier populations, and the energy structure of these carriers. By intentionally adding small impurity concentrations one can control theses features. The project archived here is supported by the National Science Foundation division of materials research and is a collaboration between Rutgers (Prof. L.C. Feldman), Georgia Tech (Prof. E.H. Conrad), and the University of Minnesota (Prof. P.I. Cohen).


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Widegap semiconducting graphene from nitrogen seeded SiC

Wang, F; Liu, G; Rothwell, S; Nevius, M; Tajeda, A; Taleb-Ibrahimi, A; Feldman, L C; Cohen, P I; Conrad, E H (arXiv, 2013-06-18)
All carbon electronics based on graphene has been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of semiconducting graphene. While ...