Recess MOSFET Structure Schematic
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Device structure of (a) gate-recessed SSO MESFET on a bi-layer epitaxial film, and (b) a non-recessed control device on a single-layer film. A heavily doped n+-SSO cap layer on top of a n:SSO channel is used in order to lower the contact resistance as well as the access resistance.
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A schematic of the transistor structure.
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Materials Research Science and Engineering Center
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Truttmann, Tristan K. (2021). Recess MOSFET Structure Schematic. Retrieved from the University Digital Conservancy, https://hdl.handle.net/11299/219230.
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