CAD algorithms dealing with process and temperature effects in digital integrated circuits.
2010-01
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CAD algorithms dealing with process and temperature effects in digital integrated circuits.
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2010-01
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The aggressive scaling trend of the semiconductor industry to improve integrated circuit performance manifests itself as process, voltage and temperature (PVT) variations which can negatively impact design yield. The aim of this work is to deal with process (P) and temperature (T) effects and to develop software CAD analysis and optimization tools to mitigate their effects on digital integrated circuit performance.
In the first part of this thesis, we aim to develop an algorithm to compute the criticality of gates in a circuit with underlying process variations. The timing criticality of a gate indicates its impact on the overall timing performance of a circuit. We propose to use graph-based techniques to linearly traverse the timing graph of a digital circuit to obtain its criticality information. Such information can be useful to a designer or optimization tool in making decisions regarding gate sizing to improve the circuit performance. Our methodology must not only improve the speed of computation but also the accuracy with which we obtain the criticality values of gates in the circuit.
In the second part of this thesis, we propose to deal with temperature effects in the presence of increased scaling of devices. The sub-threshold leakage power of a digital chip, which is the wasted power in a digital circuit without doing any useful work, is exponentially dependent on the operating temperature of the chip. We propose to use techniques to exploit this dependence to reduce the sub-threshold leakage power. By rearranging the physical placement we can affect the temperature distribution of various blocks on a digital chip, thereby also affecting the total sub-threshold leakage power. We aim to develop a physical floorplanning tool to alleviate the temperature and sub-threshold leakage power by taking into account their interdependence.
This work proposes to use task migration (TM) as a methodology to deal with increasing sub-threshold leakage power in future technology nodes. The main idea is to replicate certain high-power blocks in the design, and migrate tasks at regular intervals from one part of the chip to another, thereby reducing the power density and temperature of the design. We aim to develop a CAD optimization framework using floorplanning to read in a circuit description and produce a physical floorplan layout of the TM-aware design. This involves the selection of the design blocks to replicate, followed by the judicious placement of the blocks and finally the selection of an appropriate migration interval taking into account its negative impact on circuit performance.
The traditional semiconductor process technology consists of a single layer of silicon on which various devices like transistors and diodes are fabricated along with several layers of metal. Besides the problems outlined above, increasing device density is forcing larger die footprints. As a result, designers are facing increased congestion of routing wires, limiting the amount of performance benefit with scaling. Three-dimensional or vertical integration technology offers a promising alternative, in which multiple layers of silicon with their associated metal layers are stacked on top of each other. Field-programmable devices are particularly suited to such a technology due to the regular layout of logic and routing elements on the die. As the final part of this thesis, we examine the benefits of vertical integration applied to field programmable logic devices.
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University of Minnesota Ph.D. dissertation. January 2010. Major: Electrical Engineering. Advisor: Kia Bazargan. 1 computer file (PDF); xix, 161 pages. Ill. (some col.)
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Mogal, Hushrav. (2010). CAD algorithms dealing with process and temperature effects in digital integrated circuits.. Retrieved from the University Digital Conservancy, https://hdl.handle.net/11299/59437.
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