Process variation and scaling effects on embedded DRAMs.

Abstract

Embedded DRAM has been an important branch of embedded memories recently. The scaling trend in the power comparison between SRAM and eDRAM is conducted. To improve the performance of eDRAM various kinds of eDRAM cells are introduced. The scaling trend of major leakage currents affecting eDRAM performance is presented, as well as their impact on the behavior of various cells. A method to evaluate the effect from the process variation is introduced. The comparison on 28nm and 65nm 2T & 2T1C cell's performance is applied to verify the conclusions made on the leakage scaling. Finally, the technology full of potential for eDRAM, FinFET, is introduced.