Analysis of Turbostatic Graphene grown using chemical vapor deposition of Acetylene on Sapphire

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Analysis of Turbostatic Graphene grown using chemical vapor deposition of Acetylene on Sapphire

Authors

Kelly, Priscilla

Rothwell, Sara

Cohen PhD, Philip I

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2011-04-13

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Presentation

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Growing graphene on sapphire (Al2O3) by chemical vapor deposition (CVD) of acetylene is thought to introduce less strain on the bonds of graphene compared to other CVD methods. This is due to coincidence lattice matching in sapphire's hexagonal structure that appears after annealing. At this stage of my research, we are testing deposition rates of graphene on sapphire which has led to turbostratic, random and disorganized, growth. This poster demonstrates the properties of our turbostratic graphene from data collected by Raman spectroscopy, Scanning Electron Microscopy (SEM), sheet resistance measurements, and optical imaging.

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College of Science and Engineering

Department of Electrical and Computer Engineering

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Kelly, Priscilla; Rothwell, Sara; Cohen PhD, Philip I. (2011). Analysis of Turbostatic Graphene grown using chemical vapor deposition of Acetylene on Sapphire. Retrieved from the University Digital Conservancy, https://hdl.handle.net/11299/113592.

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