Electronic and Optical Properties of Quantum Dots: Metal-Insulator Transitions and Ultrafast Spectroscopy
2020-05
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Electronic and Optical Properties of Quantum Dots: Metal-Insulator Transitions and Ultrafast Spectroscopy
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2020-05
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In this thesis I will discuss crossing the metal-insulator transition in ZnO nanocrystal networks as well as the synthesis, electronic states and optical properties of novel infrared emitting CdSe/HgS/CdS QDs. To observe the metal-insulator transition we use a photonic sintering process to selectively increase both the inter-nanocrystal facet radius and the free electron density. This, combined with atomic layer deposition to infill the film, enables us to clear cross the metal-insulator transition. Second, I discuss the synthesis of high quality CdSe/HgS/CdS QDs. The HgS interlayer creates a 'well' for the electrons while holes are delocalized throughout the CdSe/HgS structure. This quasi-type-II system exhibits tunable emission in discrete steps as a function of the HgS interlayer thickness, which we can control with atomic level precision. We investigate the multi-excitonic properties of these dots, and also show their utility for use as near infrared single photon emitters.
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University of Minnesota Ph.D. dissertation. May 2020. Major: Physics. Advisor: Uwe Kortshagen. 1 computer file (PDF); viii, 133 pages.
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Robinson, Zachary. (2020). Electronic and Optical Properties of Quantum Dots: Metal-Insulator Transitions and Ultrafast Spectroscopy. Retrieved from the University Digital Conservancy, https://hdl.handle.net/11299/224599.
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