Integrated Surface Acoustic Wave Device on an Aluminum Nitride Wafer
2011-08-11
Loading...
View/Download File
Persistent link to this item
Statistics
View StatisticsJournal Title
Journal ISSN
Volume Title
Title
Integrated Surface Acoustic Wave Device on an Aluminum Nitride Wafer
Authors
Published Date
2011-08-11
Publisher
Type
Presentation
Abstract
Surface acoustic wave (SAW) devices are essential for many signal processing applications, ranging from filtering a signal, creating a device for military use, or using them to create a cell phone with better reception. Surface acoustic waves are generated by applying an electric signal to a piezoelectric substrate, which then turns the electric signal into an acoustic wave. SAW devices contain rectangular-looking figures known as interdigital transducers, essential for converting the acoustic wave back into an electric signal at the output. Therefore, two SAW devices are required for this effect to occur. The piezoelectric substrate used in this project is Aluminum Nitride (AlN), which allows the user to send a high frequency to the SAW device and operate at high temperatures.
Description
Additional contributors: Dr. Jong Noh, Yu Chen, Huan Li, Dr. Mo Li (faculty mentor)
Related to
Replaces
License
Series/Report Number
Funding information
This research was supported by the National Science Foundation.
Isbn identifier
Doi identifier
Previously Published Citation
Other identifiers
Suggested citation
Ramirez, Johnny. (2011). Integrated Surface Acoustic Wave Device on an Aluminum Nitride Wafer. Retrieved from the University Digital Conservancy, https://hdl.handle.net/11299/113767.
Content distributed via the University Digital Conservancy may be subject to additional license and use restrictions applied by the depositor. By using these files, users agree to the Terms of Use. Materials in the UDC may contain content that is disturbing and/or harmful. For more information, please see our statement on harmful content in digital repositories.