Thermoelectric Properties of Doped Silicon Nanocrystal Films Deposited by Nothermal Plasmas

Abstract

In this research, phosphorus doped and boron doped silicon nanocrystal films were synthesized using nonthermal plasma with roll-to-roll process. SEM and XRD were used to characterize these films. Electrical conductivities and Seebeck coefficients of these films were measured at the different temperatures in the vacuum chamber. The effect of doping level, annealing, thickness, and oxidation on electrical conductivities and Seebeck coefficients were studied and discussed to improve the thermoelectric performance.