Thermoelectric Properties of Doped Silicon Nanocrystal Films Deposited by Nothermal Plasmas
2019-06
Loading...
View/Download File
Persistent link to this item
Statistics
View StatisticsJournal Title
Journal ISSN
Volume Title
Title
Thermoelectric Properties of Doped Silicon Nanocrystal Films Deposited by Nothermal Plasmas
Authors
Published Date
2019-06
Publisher
Type
Thesis or Dissertation
Abstract
In this research, phosphorus doped and boron doped silicon nanocrystal films were synthesized using nonthermal plasma with roll-to-roll process. SEM and XRD were used to characterize these films. Electrical conductivities and Seebeck coefficients of these films were measured at the different temperatures in the vacuum chamber. The effect of doping level, annealing, thickness, and oxidation on electrical conductivities and Seebeck coefficients were studied and discussed to improve the thermoelectric performance.
Description
University of Minnesota M.S.Mat.S.E. thesis. June 2019. Major: Material Science and Engineering. Advisor: Uwe Kortshagen. 1 computer file (PDF); v, 37 pages.
Related to
Replaces
License
Series/Report Number
Funding information
Isbn identifier
Doi identifier
Previously Published Citation
Suggested citation
Yang, Yueke. (2019). Thermoelectric Properties of Doped Silicon Nanocrystal Films Deposited by Nothermal Plasmas. Retrieved from the University Digital Conservancy, https://hdl.handle.net/11299/206152.
Content distributed via the University Digital Conservancy may be subject to additional license and use restrictions applied by the depositor. By using these files, users agree to the Terms of Use. Materials in the UDC may contain content that is disturbing and/or harmful. For more information, please see our statement on harmful content in digital repositories.