Browsing by Subject "PVT"

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    Design of PVT Tolerant Inverter Based Circuits for Low Supply Voltages
    (2015-06) Palani, Rakesh Kumar
    Rapid advances in the field of integrated circuit design has been advantageous from the point of view of cost and miniaturization. Although technology scaling is advantageous to digital circuits in terms of increased speed and lower power, analog circuits strongly suffer from this trend. This is becoming a crucial bottle neck in the realization of a system on chip in scaled technology merging high-density digital parts, with high performance analog interfaces. This is because scaled technologies reduce the output impedance (gain) and supply voltage which limits the dynamic range (output swing). One way to mitigate the power supply restrictions is to move to current mode circuit circuit design rather than voltage mode designs. This thesis focuses on designing Process Voltage and Temperature (PVT) tolerant base band circuits at lower supply voltages and in lower technologies. Inverter amplifiers are known to have better transconductance efficiency, better noise and linearity performance. But inverters are prone to PVT variations and has poor CMRR and PSRR. To circumvent the problem, we have proposed various biasing schemes for inverter like semi constant current biasing, constant current biasing and constant gm biasing. Each biasing technique has its own advantages, like semi constant current biasing allows to select different PMOS and NMOS current. This feature allows for higher inherent inverter linearity. Similarly constant current and constant gm biasing allows for reduced PVT sensitivity. The inverter based OTA achieves a measured THD of -90.6 dB, SNR of 78.7 dB, CMRR 97dB, PSRR 61 dB wile operating from a nominal power of 0.9V and at output swing of 0.9V{pp,diff} in TSMC 40nm general purpose process. Further the measured third harmonic distortion varies approximately by 11.5dB with 120C variation in temperature and 9dB with a 18% variation in supply voltage. The linearity can be increased by increasing the loop gain and bandwidth in a negative feedback circuit or by increasing the over drive voltage in open loop architectures. However both these techniques increases the noise contribution of the circuit. There exist a trade off between noise and linearity in analog circuits. To circumvent this problem, we have introduced nonlinear cancellation techniques and noise filtering techniques. An analog-to-digital converter (ADC) driver which is capable of amplifying the continuous time signal with a gain of 8 and sample onto the input capacitor(1pF) of 1 10 bit successive approximation register (SAR) ADC is designed in TSMC 65nm general purpose process. This exploits the non linearity cancellation in current mirror and also allows for higher bandwidth operation by decoupling closed loop gain from the negative feedback loop. The noise from the out of band is filtered before sampling leading to low noise operation. The measured design operates at 100MS/s and has an OIP_3 of 40dBm at the nyquist rate, noise power spectral density of 17nV/sqrt{Hz} and inter modulation distortion of 65dB. The intermodulation distortion variation across 10 chips is 6dB and 4dB across a temperature variation of 120C. Non linearity cancellation is exploited in designing two filters, an anti alias filter and a continuously tunable channel select filter. Traditional active RC filters are based on cascade of integrators. These create multiple low impedance nodes in the circuit which results in a higher noise. We propose a real low pass filter based filter architecture rather than traditional integrator based approach. Further the entire filtering operation takes place in current domain to circumvent the power supply limitations. This also facilitates the use of tunable non linear metal oxide semiconductor capacitor (MOSCAP) as filter capacitors. We introduce techniques of self compensation to use the filter resistor and capacitor as compensation capacitor for lower power. The anti alias filter designed for 50MHz bandwidth is fabricated in IBM 65nm process achieves an IIP3 of 33dBm, while consuming 1.56mW from 1.2 V supply. The channel select filter is tunable from 34MHz to 314MHz and is fabricated in TSMC 65nm general purpose process. This filter achieves an OIP3 of 25.24 dBm at the maximum frequency while drawing 4.2mA from 1.1V supply. The measured intermodulation distortion varies by 5dB across 120C variation in temperature and 6.5dB across a 200mV variation in power supply. Further this filter presents a high impedance node at the input and a low impedance node at the output easing system integration. SAR ADCs are becoming popular at lower technologies as they are based on device switching rather than amplifying circuits. But recent SAR ADCs that have good energy efficiency have had relatively large input capacitance increasing the driver power. We present a 2X time interleaved (TI) SAR ADC which has the lowest input capacitance of 133fF in literature. The sampling capacitor is separated from the capacitive digital to analog converter (DAC) array by performing the input and DAC reference subtraction in the current domain rather than as done traditionally in charge domain. The proposed ADC is fabricated in TSMC's 65nm general purpose process and occupies an area of 0.0338 mm^2. The measured ADC spurious free dynamic range (SFDR) is 57dB and the measured effective number of bits (ENOB) at nyquist rate is 7.55 bit while using 1.55mW power from 1 V supply. A sub 1V reference circuit is proposed, that exploits the complementary to absolute temperature (CTAT) and proportional to absolute temperature (PTAT) voltages in the beta multiplier circuit to attain a stable voltage with temperature and power supply. A one-time calibration is integrated in the architecture to get a good performance over process. Chopper stabilization is employed to reduce the flicker noise of the reference circuit. The prototype was simulated in TSMC 65nm process and we obtain the nominal output of 236mW, while consuming 0.7mW from power supply. Simulations show a temperature coefficient of 18 ppmC from -40 to 100C and with a power supply ranging from 0.8 to 2V.
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    Monte Carlo Simulations for Multicomponent Phase Equilibria and Thermophysical Properties of Near-Critical Fluids
    (2014-09) Cortes Morales, Angel
    Understanding phase equilibria and thermophysical properties of complex fluid mixtures is crucial to the oil and gas industry, particularly for exploration and production process design. Crude oil and natural gases in such processes are subjected to a very broad range of conditions, under which experimental measurement of physical properties can be quite challenging. To overcome this, the industry has made extensive use of traditional thermodynamic models, such as equations of state and activity coefficient models. However, these conventional tools often lack the necessary predictive power to accurately model fluid properties across the entire range of relevant conditions, especially at extreme conditions where experimental data is often limited. Hence, Monte Carlo simulations have been employed to determine the microscopic features required for improving current PVT modeling methods. Results have shown that these simulations provide remarkably accurate descriptions of phase equilibria and thermophysical properties of fluids relevant to petroleum processing across a wide range of conditions, showing the versatility of molecular simulations as a predictive modeling tool and for developing new modeling methods.