Browsing by Author "Huang, Yi"

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    Disorder Effects in Quantum Materials
    (2023-08) Huang, Yi
    Decades of dedicated efforts in controlling disorder in conventional semiconductors have laid the foundation for our modern civilization, based on chips and all kinds of electronic devices. Nowadays, there is a growing interest in the so-called quantum materials whose properties are fundamentally altered by quantum-mechanical effects. Such quantum materials include two-dimensional heterostructures, topological insulators, graphene, superconductors, and many others. The strong interaction between electrons and topology within quantum materials gives rise to rich quantum states and phases such as quantum Hall effects and topological phases. For example, an exciting future application of quantum materials is the topological quantum computer, which is believed to be the most robust way to process quantum information. However, engineering such quantum materials must deal with ubiquitous impurities, which often ruin the delicate quantum-mechanical effects of interest and prevent the topological quantum computation from being realized. My dissertation research focuses on analyzing how the disorder affects the resistivity of different kinds of quantum materials, e.g., topological insulator thin films and wires, non-Hermitian random lasers and photonic lattices, and GaAs/AlGaAs heterostructures. Therefore, my dissertation research on improving the understanding of disorder effects in quantum materials has a broader impact on various fields from fundamental research to material engineering and technology.
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    Supporting data for spectral rigidity of non-Hermitian symmetric random matrices near the Anderson transition
    (2020-10-27) Shklovskii, Boris, I; Huang, Yi; shklo001@umn.edu; Shklovskii, Boris, I; Materials Research Science & Engineering Center
    We numerically calculate the number variance in the three dimensional TME model and study the evolution of the number variance as a function of average number of eigenvalues with different disorder parameters as the system goes from a metal to an insulator. We use statistics of complex eigenvalues obtained by diagonalization of the TME model on many realizations of cubic lattices with side length L = 8,12,16. The diagonalization is done using LAPACK algorithm. The TME model may be used to describe a random laser.