Browsing by Author "Chemical Engineering and Materials Science, University of Minnesota"

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    Data for Doping- and Strain-Dependent Electrolyte-Gate-Induced Perovskite to Brownmillerite Transformation in Epitaxial La1−xSrxCoO3−δ Films
    (2021-11-17) Chaturvedi, Vipul; Postiglione, William M; Chakraborty, Rohan D; Yu, Biqiong; Tabiś, Wojciech; Hameed, Sajna; Biniskos, Nikolaos; Jacobson, Andrew; Zhang, Zhan; Zhou, Hua; Greven, Martin; Ferry, Vivian E; Leighton, Chris; leighton@umn.edu; Leighton, Chris; Chemical Engineering and Materials Science, University of Minnesota; AGH University of Science and Technology, Faculty of Physics and Applied Computer Science; Advanced Photon Source, Argonne National Laboratory; School of Physics and Astronomy, University of Minnesota
    Electrolyte-gate-induced perovskite to brownmillerite transformations in La1-xSrxCoO3-d (LSCO) has been shown to be a facile technique to toggle between disparate electronic and magnetic phases in a single perovskite oxide thin film. Here we study the doping (Sr concentration), and strain (epitaxially imparted from the substrate) dependence of this topotactic transformation in LSCO thin films across almost the entire phase diagram. This repository page serves as a place to store the Figure plots and raw data from the cited publication.
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    Data for Reexamination of the electronic phase diagram of doped NiS₂: Electronic, magnetic, and structural inhomogeneity across the Mott insulator-metal transition
    (2024-11-04) Tao, Yu; Das, Bhaskar; Calder, Stuart; Day-Roberts, Ezra; Maiti, Moumita; Lee, Yeon; Komar, Caitlyn; Birol, Turan; Leighton, Chris; leighton@umn.edu; Leighton, Chris; Leighton Electronic and Magnetic Materials Lab; Chemical Engineering and Materials Science, University of Minnesota
    Pyrite-structure NiS₂ is, in principle, a model antiferromagnetic Mott insulator that can be electron doped, hole doped, and bandwidth controlled. Despite decades of study, however, the electronic and magnetic behavior of NiS₂ have proven challenging to understand. Here, we build on recent advances establishing surface conduction in NiS₂ to completely reexamine the electronic phase behavior of electron- and hole-doped single-crystal Ni₁₋ₓCuₓS₂ and Ni₁₋ₓCoₓS₂. Magnetometry, heat capacity, neutron diffraction, and electronic transport measurements suggest that prior work missed vital details of the magnetic ordering in this system. While electron and hole doping rapidly increase the antiferromagnetic ordering temperature (by as much as 4-fold by x ≈ 0.1), signatures remain of antiferromagnetic and weak ferromagnetic ordering at the same temperatures as in undoped NiS₂. As these undoped ordering temperatures remain constant, the associated magnetic moments are diminished by doping, strongly implicating electronic/ magnetic phase coexistence across the Mott insulator-metal transition. Substantial structural changes and inhomogeneity accompany these evolutions, highlighting the importance of structural-chemical-electronic-magnetic coupling in NiS₂. The insulator-metal transition is also strongly electron/hole asymmetric, which we interpret with the aid of complementary dynamical mean-field theory results. These findings significantly revise and advance our understanding of the electronic phase behavior of this prototypical Mott insulator, highlighting the essential role of electronic, magnetic, structural, and chemical inhomogeneity across the Mott transition. This dataset contains all digital data in the published paper of the same name.