Chaturvedi, VipulPostiglione, William MChakraborty, Rohan DYu, BiqiongTabiś, WojciechHameed, SajnaBiniskos, NikolaosJacobson, AndrewZhang, ZhanZhou, HuaGreven, MartinFerry, Vivian ELeighton, Chris2021-11-172021-11-172021-11-17https://hdl.handle.net/11299/225305The attached files and data sets represent the actual published Figures (in .tif format) and the corresponding x,y data pulled from each plot in the Figures (in .xlsx format). The data includes electronic transport data from in situ ion-gel-gating experiments, specular synchrotron x-ray diffraction (SXRD) data from operando gating experiments (Argonne National Lab), and summarized parameters extracted from each. Significantly, threshold voltage vs. Sr doping, extracted from electronic transport and SXRD for films on different substrates (different strain states, compressive vs tensile) and average Co valence vs. gate voltage, extracted from low temperature transport and magnetometry data, and single crystal literature values (see main text for full descriptions)Electrolyte-gate-induced perovskite to brownmillerite transformations in La1-xSrxCoO3-d (LSCO) has been shown to be a facile technique to toggle between disparate electronic and magnetic phases in a single perovskite oxide thin film. Here we study the doping (Sr concentration), and strain (epitaxially imparted from the substrate) dependence of this topotactic transformation in LSCO thin films across almost the entire phase diagram. This repository page serves as a place to store the Figure plots and raw data from the cited publication.Attribution-NonCommercial-NoDerivs 3.0 United Stateshttp://creativecommons.org/licenses/by-nc-nd/3.0/us/electrolyte gatingionic control of materialsperovskite oxidescobaltitesvoltage-controlled magnetismDatasethttps://doi.org/10.13020/944x-0y67