Data for Limits on Topotactic Transformation Speed in Electrolyte-Gate La0.5Sr0.5CoO3-𝛿 Electrochemical Transistors

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2023-05-01
2025-03-01

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2025-05-16

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Leighton, Chris
leighton@umn.edu

Abstract

The data included here contains the information necessary to recreate the figures in a manuscript titled "Limits on Topotactic Transformation Speed in Electrolyte-Gate La0.5Sr0.5CoO3‑δ Electrochemical Transistors". The data files include experimental X-ray diffraction data for the films; the Vg hysteresis loops, resistivity, and anomalous Hall measurements for P-BM transformation; the gate-geometry and film-thickness dependent Vg hysteresis loops; and time domain device characterization.

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Data files are categorized by the manuscript figure that they correspond to. Additional information can be found in Liang_et_al_Readme.txt.

Referenced by

Liang, J., Postiglione, W. M., Van Someren, M., Nandakumaran, N., Jeong, B. W., Frisbie, C. D., & Leighton, C. (2025). Limits on Topotactic Transformation Speed in Electrolyte-Gate La0. 5Sr0. 5CoO3-δ Electrochemical Transistors. ACS Nano, 19(30), 27782-27793. https://doi.org/10.1021/acsnano.5c08184

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National Science Foundation (NSF): DMR-2011401
National Science Foundation (NSF): ECCS-2025124

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Liang, Jierui; Postiglione, William M; Someren, Margaret V; Nandakumaran, Nileena; Jeong, Benjamin W; Frisbie, C. Daniel; Leighton, Chris. (2025). Data for Limits on Topotactic Transformation Speed in Electrolyte-Gate La0.5Sr0.5CoO3-𝛿 Electrochemical Transistors. Retrieved from the Data Repository for the University of Minnesota (DRUM), https://doi.org/10.13020/g0jm-f075.

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