Browsing by Subject "Spintronic Device"
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Item Magnetic tunnel junction based spintronic logic and memory devices.(2011-11) Yao, XiaofengThe development of semiconductor devices is limited by the high power consumption and further physical dimension reduction. Spintronic devices, especially the magnetic tunnel junction (MTJ) based devices, have advantages of non-volatility, reconfigurable capability, fast-switching speed, small-dimension, and compatibility to semiconductor devices, which is a promising candidate for future logic and memory devices. However, the previously proposed MTJ logic devices have been operated independently and therefore are limited to only basic logic operations. Consequently, the MTJ device has only been used as ancillary device in the circuit, rather than the main computation component. In this thesis, study has been done on both spintronic logic and memory devices. In the first part, systematic study has been performed on MTJ based logic devices in order to expand the functionalities and properties of MTJ devices. Basic logic cell with threeinput has been designed and simulated. Nano-magnetic-channel has been proposed, which is the first design to realize the communication between the MTJ logic cells. With basic logic unit as a building block, a spintronic logic circuit has been designed with MTJ as the dominant component. HSPICE simulation has been done for this spintronic logic circuit, which acts as an Arithmetic Logic Unit. acts as an Arithmetic Logic Unit.Item Theoretical Study of Gilbert Damping and Spin Dynamics in Spintronic Devices(2017-08) Qu, TaoThe determination of damping mechanisms is one of the most fundamental problems of magnetism. It represents the elimination of the magnetic energy and thus has broad impact in both science and technology. The dynamic time scale in spintronic devices is controlled by the damping and the consumed power depends on the damping constant squared. In recent years, the interest in high perpendicular anisotropy materials and thin film structures have increased considerably, owing to their stability over a wide temperature range when scaling devices to nanometer length scales. However, the conventional measurement method-Ferromagnetic resonance (FMR) can not produce accurate damping results in the high magnetic crystalline anisotropy materials/structures, and the intrinsic damping reported experimentally diverges among investigators, probably due to the varying fabrication techniques. This thesis describes the application of the Kambersky torque correlation technique, within the tight binding method, to multiple materials with high perpendicular magnetic anisotropy ($\sim10^7$ erg/cm$^3$), in both bulk and thin film structures. The impact of the inevitable experimental defects on the energy dissipation is identified and the experimental damping divergence among investigators due to the material degree of order is explained. It is demonstrated that this corresponds to an enhanced DOS at the Fermi level, owing to the rounding of the DOS with loss of long-range order. The consistency of the predicted damping constant with experimental measurement is demonstrated and the interface contribution to the energy damping constant in potential superlattices and heterostructures for spintronic devices is explored. An optimized structure will be a tradeoff involving both anisotropy and damping. The damping related spin dynamics in spintronic devices for different applications is investigated. One device is current perpendicular to planes(CPP) spin valve. Incoherent scattering matrices are applied to calculate the angle dependent magnetoresistantce and obtain analytic expressions for the spin valve. The non-linearity of magnetoresistance can be quantitatively explained by reflected electrons using only experimental spin polarization as input. The other device is a spin-transfer-torque nano-oscillator. The Landau-Lifshitz-Gilbert equation is applied and the synchronization requirement for experimentally fabricated non-identical multi spintronic oscillators is explored. Power enhancement and noise decrease for the synchronized state is demonstrated in a temperature range. Through introducing combined electric and magnetic coupling effect, a design for an optimized feasible nanopillar structure suitable for thin-film deposition is developed.