Graphene has become one of the most popular materials under research, particularly since the 2010 Nobel Prize in Physics. Many visions posit that graphene electronics will be some of the fastest and smallest circuitry physically feasible, however before this becomes reality the scientific community must gain a firm handle on the creation of semiconducting varieties of graphene. In addition, well understood epitaxial growth of graphene on insulating materials will add to the facility of fabricating all-carbon electronics. This thesis presents experimental work detailing the growth of pristine graphene grown on sapphire (GOS) through the thermal decomposition of acetylene, and the electronic characterization of graphene grown on nitrogen-seeded silicon carbide (NG), a semiconducting variety of graphene grown in collaboration with researchers at Georgia Institute of Technology and Rutgers University. GOS displays turbostratic stacking and characteristics of monolayer graphene as analyzed by Raman spectroscopy and atomic force microscopy. Scanning tunneling microscopy characterization of NG illustrates a topography of pleats from 0.5-2 nm tall, 1-4 nm thick, and 1-20 nm long, as well as atomically flat plateaus and other areas of intermixed features. Scanning tunneling spectroscopy measurements across NG features show peaks interpreted as Landau levels induced by strain. Analysis of these Landau levels in coordination with previous characterization concludes that a model employing a bandgap fits best.